제조업체 부품번호 IRFPS3810PBF
제조업체 International Rectifier
규격 Pwr MOSFET, 100V Single N-Ch. HEXFET; Super 247 (TO-274AA)
주문 가능 수량 50
제품 세부 사항
| Capacitance, Input | : | 6790 pF @ 25 V | | Channel Type | : | N | | Configuration | : | Single | | Current, Drain | : | 170 A | | Dimensions | : | 16.1 x 5.3 x 20.8 mm | | Gate Charge, Total | : | 260 nC | | Height | : | 0.819" (20.8mm) | | Length | : | 0.633" (16.1mm) | | Mounting Type | : | Through Hole | | Number of Elements per Chip | : | 1 | | Number of Pins | : | 3 | | Package Type | : | Super-247 | | Polarization | : | N-Channel | | Power Dissipation | : | 580 W | | Product Header | : | Hexfet® Power MOSFET | | Resistance, Drain to Source On | : | 0.009 Ω | | Series | : | HEXFET Series | | Temperature, Operating, Maximum | : | +175 °C | | Temperature, Operating, Minimum | : | -55 °C | | Temperature, Operating, Range | : | -55 to +175 °C | | Time, Turn-Off Delay | : | 45 ns | | Time, Turn-On Delay | : | 24 ns | | Transconductance, Forward | : | 52 S | | Typical Gate Charge @ Vgs | : | 260 nC @ 10 V | | Voltage, Breakdown, Drain to Source | : | 100 V | | Voltage, Drain to Source | : | 100 V | | Voltage, Forward, Diode | : | 1.3 V | | Voltage, Gate to Source | : | ± 30 V | | Width | : | 0.209" (5.3mm) |
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