MOSFET Transistors > MAGNACHIP

제조업체 부품번호 MDP10N60GTH

제조업체 MagnaChip

규격 MagnaChip MDP10N60GTH N-channel MOSFET, 10 A, 660 V, 3-Pin TO-220

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High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MagnaChip MDP10N60GTH N-channel MOSFET, 10 A, 660 V, 3-Pin TO-220

	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	660 V
	Maximum Drain Source Resistance	700 mΩ
	Maximum Gate Threshold Voltage	5V
	Maximum Gate Source Voltage	-30 V, +30 V
	Package Type	TO-220
	Mounting Type	Through Hole
	Transistor Configuration	Single
	Pin Count	3
	Channel Mode	Enhancement
	Maximum Power Dissipation	156 W
	Width	4.83mm
	Number of Elements per Chip	1
	Height	16.51mm
	Maximum Operating Temperature	+150 °C
	Length	10.67mm
	Dimensions	10.67 x 4.83 x 16.51mm
	Transistor Material	Si
	Typical Turn-On Delay Time	53 ns
	Minimum Operating Temperature	-55 °C
	Typical Gate Charge @ Vgs	32 nC @ 10 V
	Typical Input Capacitance @ Vds	1360 pF @ 25 V
	Forward Diode Voltage	1.4V
	Typical Turn-Off Delay Time	116 ns
	Forward Transconductance	9S