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[Uncategorized] IGBT Transistor Modules

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01-22

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제조업체 부품번호 MPMD100B120RH

제조업체 MagnaChip

규격 MagnaChip MPMD100B120RH, 7DM-3 Series IGBT Module, 100 A max, 1200 V, Panel Mount

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제품 세부 사항

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

MagnaChip MPMD100B120RH, 7DM-3 Series IGBT Module, 100 A max, 1200 V, Panel Mount

	Configuration	Series
	Transistor Configuration	Series
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Channel Type	N
	Mounting Type	Panel Mount
	Package Type	7DM-3
	Pin Count	7
	Switching Speed	70kHz
	Maximum Power Dissipation	780 W
	Dimensions	108.5 x 62.5 x 20.5mm
	Height	20.5mm
	Length	108.5mm
	Maximum Operating Temperature	+150 °C
	Width	62.5mm
	Minimum Operating Temperature	-55 °C